Fabrication and characterization of T-gate polysilicon thin-film transistors with lightly-doped drain

Abstract We report detailed fabrication and characterization of poly-Si thin-film transistors (TFTs) with T-shaped gate (T-gate) lightly-doped drain (LDD) structures. The formation the LDD underneath wings a T-gate primarily relies on shadowing implanted dopants during implantation source drain. Therefore, structures in our proposed TFTs can save number process steps as compared to conventional Our fabricated T-gated not only exhibit suppressed off-state leakage current but also show significant improvement on-state that same top-gate dimension.